Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films

As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond been demonstrated as an effective solution for thermal management of these by directly growing onto the transistor substrate. A key aspect radio frequency (RF) involves transient switching behavior, which highlights importance understanding temperature dependence material’s capacity conductivity when modeling predicting electro-thermal response. Due complicated microstructure near interface between CVD material, it is difficult measure properties simultaneously. In this work, we use time-domain thermoreflectance (TDTR) simultaneously in-plane 1-µm-thick film via multi-frequency analysis. We obtain dependent using pump beam sample according increasing power. This mitigates need more setup stage but limited upper boundaries based on geometry properties. The results show that varied slightly with average 103 W/m-K over range 302–327 K, while specific strong same compares well data natural literature.